The influence of Büttiker probe scattering to the port behavior of nanoscale metal-oxide-semiconductor devices.

SUMMARY This paper presents a discussion of the impact of Büttiker probe scattering on the port behavior of nanoscaled metal-oxide-semiconductor devices. The simulation of the carrier transport property is based on the nonequilibrium Green's function formalisms, and scattering effects are implemented in the model through Büttiker probes. For reducing the computational burden, a simplified model for modeling the scattering effects with only one Büttiker probe is proposed and gives reasonable results for studying the port behaviors of nanoscaled metal-oxide-semiconductor devices. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]