Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si.

Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350 °C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices have been fabricated, reporting a carrier mobility of 460 cm2/V s and 121 cm2/V s for electrons and holes, respectively. The devices were peeled off and transferred onto a polyethylene naphthalate foil to achieve flexible devices. CMOS inverters were also fabricated and show full output swing. [ABSTRACT FROM AUTHOR]