Cite
Performance and characteristics of double layer porous silicon oxide resistance random access memory.
MLA
Tsai, Tsung-Ming, et al. “Performance and Characteristics of Double Layer Porous Silicon Oxide Resistance Random Access Memory.” Applied Physics Letters, vol. 102, no. 25, June 2013, p. 253509. EBSCOhost, https://doi.org/10.1063/1.4812474.
APA
Tsai, T.-M., Chang, K.-C., Zhang, R., Chang, T.-C., Lou, J. C., Chen, J.-H., Young, T.-F., Tseng, B.-H., Shih, C.-C., Pan, Y.-C., Chen, M.-C., Pan, J.-H., Syu, Y.-E., & Sze, S. M. (2013). Performance and characteristics of double layer porous silicon oxide resistance random access memory. Applied Physics Letters, 102(25), 253509. https://doi.org/10.1063/1.4812474
Chicago
Tsai, Tsung-Ming, Kuan-Chang Chang, Rui Zhang, Ting-Chang Chang, J. C. Lou, Jung-Hui Chen, Tai-Fa Young, et al. 2013. “Performance and Characteristics of Double Layer Porous Silicon Oxide Resistance Random Access Memory.” Applied Physics Letters 102 (25): 253509. doi:10.1063/1.4812474.