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Carbon-doped GaAs single junction solar microcells grown in multilayer epitaxial assemblies.
- Source :
-
Applied Physics Letters . 6/24/2013, Vol. 102 Issue 25, p253902-253902-5. 1p. 1 Diagram, 3 Graphs. - Publication Year :
- 2013
-
Abstract
- A stack design for carbon-doped GaAs single junction solar microcells grown in triple-layer epitaxial assemblies is presented. As-grown materials exhibit improved uniformity of photovoltaic performance compared to zinc-doped systems due to the lack of mobile dopants while a slight degradation exists in middle and bottom devices. Detailed electrical and optical characterizations of devices together with systematic studies of acceptor reactivation reveal carbon-related defects accompanied by carrier compensation, and associated scattering and recombination centers are primarily responsible for the degraded contact properties and photovoltaic performance, resulting from prolonged thermal treatments of early-grown materials during the multilayer epitaxial growth. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 102
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 88783260
- Full Text :
- https://doi.org/10.1063/1.4812399