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Advanced Operational Techniques and pn-pn-pn Structures for High-Power Silicon Carbide Gate Turn-Off Thyristors.
- Source :
-
IEEE Transactions on Power Electronics . Nov2002, Vol. 17 Issue 6, p1073. 7p. 2 Black and White Photographs, 2 Diagrams, 3 Charts, 9 Graphs. - Publication Year :
- 2002
-
Abstract
- Presents a study which developed an operational technique, growth requirements and pn-pn-pn type structures to address the issues of high on-state voltage and other problems on breakover voltages in silicon carbide thyristors. Procedures for the fabrication of thyristors; Discussion; Results.
- Subjects :
- *THYRISTORS
*SILICON carbide
*SEMICONDUCTORS
*POWER electronics
Subjects
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 17
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 8895139
- Full Text :
- https://doi.org/10.1109/TPEL.2002.805591