Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy.

Resonance Raman measurements are carried out on defect-free wurtzite GaP nanowires over the excitation energy range between 2.19 and 2.71 eV. Resonances of the E1(LO) and A1(LO) modes demonstrate the existence of energy states with Γ9hh and Γ7V (Γ7C) symmetries of the valence (conduction) band and enable us to measure wurtzite phase GaP band energies. In addition, we have performed temperature dependent resonant Raman measurements, which allowed us to extrapolate the zero temperature values of Γ point energies. Our results provide the necessary feedback required for refining the available theoretical calculations to derive the correct wurtzite III-V semiconductor band structure. [ABSTRACT FROM AUTHOR]