Capacitance–frequency (C–f) and conductance–frequency (G–f) characteristics of Ir/n-InGaN Schottky diode as a function of temperature.

Highlights: [•] C–f and G–f characteristics of Ir/n-InGaN SBDs are studied at different temperatures. [•] The N ss and τ of the Ir/n-InGaN SBD are determined from C–f characteristics. [•] N ss show a decrease with bias from the bottom of the CB towards the mid gap at various temperatures. [•] Results reveal that the values of relaxation time τ are higher towards the low temperature. [ABSTRACT FROM AUTHOR]