Mechanical stress effect on the crystallization behavior of Ge2Sb2Te5 films studied by electrical resistance measurement.

The mechanical stress effect on the crystallization behaviour of Ge2Sb2Te5(GST) thin films is carefully investigated by electrical resistance measurements. It is found that the crystallization temperature of GST films increases as external compressive stress is applied, while the crystallization temperature decreases under tensile stress. We also find that the uneven distribution of extrinsic stress can widen the span of transition temperature. These results clearly demonstrate that mechanical stress plays an important role during the crystallization process of GST films and may further influence the reliability and storage speed of relevant devices. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]