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Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers.
- Source :
-
Current Applied Physics . Aug2013, Vol. 13 Issue 6, p1060-1063. 4p. - Publication Year :
- 2013
-
Abstract
- Abstract: We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10−5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 15671739
- Volume :
- 13
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Current Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 89090779
- Full Text :
- https://doi.org/10.1016/j.cap.2013.02.021