Physics-Based Analytical Modeling of Potential and Electrical Field Distribution in Dual Material Gate (DMG)-MOSFET for Improved Hot Electron Effect and Carrier Transport Efficiency.

Proposes a two-dimensional analytical model of a dual material gate metal oxide semiconductor field-effect transistor for reduced drain-induced barrier lowering effect. Prediction of a step-function in the potential along the channel which ensures screening of drain potential variation by the gate near the drain; Optimization of the ratio of two metal gate lengths.