Cite
SiC-GTO Thyristor Gate and Drift-Region Dopant Polarity Analysis Using Electrothermal Simulation.
MLA
Shah, Pankaj B. “SiC-GTO Thyristor Gate and Drift-Region Dopant Polarity Analysis Using Electrothermal Simulation.” IEEE Transactions on Electron Devices, vol. 49, no. 11, Nov. 2002, p. 2064. EBSCOhost, https://doi.org/10.1109/TED.2002.804691.
APA
Shah, P. B. (2002). SiC-GTO Thyristor Gate and Drift-Region Dopant Polarity Analysis Using Electrothermal Simulation. IEEE Transactions on Electron Devices, 49(11), 2064. https://doi.org/10.1109/TED.2002.804691
Chicago
Shah, Pankaj B. 2002. “SiC-GTO Thyristor Gate and Drift-Region Dopant Polarity Analysis Using Electrothermal Simulation.” IEEE Transactions on Electron Devices 49 (11): 2064. doi:10.1109/TED.2002.804691.