Back to Search
Start Over
Al19Sb54Se27 material for high stability and high-speed phase-change memory applications.
- Source :
-
Scripta Materialia . Jun2013, Vol. 69 Issue 1, p61-64. 4p. - Publication Year :
- 2013
-
Abstract
- In comparison to Sb2Se, Al19Sb54Se27 has a higher crystallization temperature, larger crystallization activation energy, better data retention and a wider energy band gap. X-ray diffractometry and X-ray photoelectron spectroscopy were employed to study the crystalline structure and chemical bonding state, respectively, of the elements in Al19Sb54Se27. The picosecond laser technique was used to measure the phase-change time of Al19Sb54Se27. Phase-change memory devices based on Al19Sb54Se27 thin films were fabricated to test and evaluate their electrical properties. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13596462
- Volume :
- 69
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Scripta Materialia
- Publication Type :
- Academic Journal
- Accession number :
- 89217921
- Full Text :
- https://doi.org/10.1016/j.scriptamat.2013.03.007