Al19Sb54Se27 material for high stability and high-speed phase-change memory applications.

In comparison to Sb2Se, Al19Sb54Se27 has a higher crystallization temperature, larger crystallization activation energy, better data retention and a wider energy band gap. X-ray diffractometry and X-ray photoelectron spectroscopy were employed to study the crystalline structure and chemical bonding state, respectively, of the elements in Al19Sb54Se27. The picosecond laser technique was used to measure the phase-change time of Al19Sb54Se27. Phase-change memory devices based on Al19Sb54Se27 thin films were fabricated to test and evaluate their electrical properties. [ABSTRACT FROM AUTHOR]