Back to Search Start Over

Evaluation of plasma parameters on PEALD deposited TaCN.

Authors :
Piallat, Fabien
Beugin, Virginie
Gassilloud, Remy
Michallon, Philippe
Dussault, Laurent
Pelissier, Bernard
Asikainen, Timo
Maes, Jan Willem
Martin, François
Morin, Pierre
Vallée, Christophe
Source :
Microelectronic Engineering. Jul2013, Vol. 107, p156-160. 5p.
Publication Year :
2013

Abstract

Abstract: In this article influence of plasma parameters on TaCN deposition using Plasma Enhanced Atomic Layer Deposition (PEALD) is studied. TaCN is deposited on 300mm Si substrate with the organometallic precursor Tertiary-ButylimidoTrisDiEthyl-aminoTantalum (TBTDET) and H2/Ar plasma at different plasma power. Thickness, density, roughness, resistivity, crystallography and composition of the obtained layers were analysed by X-ray Reflection (XRR), 4 points probe measurement, X-ray Diffraction (XRD) and X-ray Photoelectron Spectrometry (XPS) respectively. Results show an evolution of the material with the increase of plasma power from a TaN-like to a TaC-like material. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
01679317
Volume :
107
Database :
Academic Search Index
Journal :
Microelectronic Engineering
Publication Type :
Academic Journal
Accession number :
89247655
Full Text :
https://doi.org/10.1016/j.mee.2012.08.020