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Effect of Metal Coverage on the Performance of 0.6-eV InGaAs Monolithic Interconnected Modules.
- Source :
-
AIP Conference Proceedings . 2003, Vol. 653 Issue 1, p424. 10p. - Publication Year :
- 2003
-
Abstract
- With the device performance of 0.6eV InGaAs monolithic interconnected modules (MIMs) reaching open circuit voltages of 400 mV/junction and achieving excellent quantum efficiency, the next step to improve performance focuses on controlling the parasitic optical absorption in these MIMs. With an integrated spectral control approach, the design of grid finger and interconnect metallization affects both the output power and the optical absorption of the MIM, The effect of metal coverage on the optical and electrical performance of MIMs processed in a multi-wafer environment is presented. [ABSTRACT FROM AUTHOR]
- Subjects :
- *INDIUM arsenide
*GALLIUM arsenide
*QUANTUM electronics
Subjects
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 653
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 8925544