Complementary Role of Field and Temperature in Triggering ON/OFF Switching Mechanisms in Hf/HfO2 Resistive RAM Cells.

We present an investigation on the role of temperature and electric field as driving forces in the initiation of the resistive switching processes. The impact of temperature in both on- and off-states is analyzed in detail, using an electrothermal numerical model formulation. dc and pulsed temperature-dependent data, collected on scaled crossbar test structure cells, serially connected with an on-chip control transistor, are used to extract material information and are furthermore analyzed in conjunction with model outputs. With these results, further discussion is presented, suggesting points of attention for scaled cell design in the below-10-nm realm. [ABSTRACT FROM AUTHOR]