Cite
Prediction of the threshold load of dislocation emission in silicon during nanoscratching.
MLA
Fang, Q. H., and L. C. Zhang. “Prediction of the Threshold Load of Dislocation Emission in Silicon during Nanoscratching.” Acta Materialia, vol. 61, no. 14, Aug. 2013, pp. 5469–76. EBSCOhost, https://doi.org/10.1016/j.actamat.2013.05.035.
APA
Fang, Q. H., & Zhang, L. C. (2013). Prediction of the threshold load of dislocation emission in silicon during nanoscratching. Acta Materialia, 61(14), 5469–5476. https://doi.org/10.1016/j.actamat.2013.05.035
Chicago
Fang, Q.H., and L.C. Zhang. 2013. “Prediction of the Threshold Load of Dislocation Emission in Silicon during Nanoscratching.” Acta Materialia 61 (14): 5469–76. doi:10.1016/j.actamat.2013.05.035.