Cite
Working toward high-power GaN/InGaN heterojunction bipolar transistors.
MLA
Shyh-Chiang Shen, et al. “Working toward High-Power GaN/InGaN Heterojunction Bipolar Transistors.” Semiconductor Science & Technology, vol. 28, no. 7, July 2013, pp. 1–8. EBSCOhost, https://doi.org/10.1088/0268-1242/28/7/074025.
APA
Shyh-Chiang Shen, Dupuis, R. D., Lochner, Z., Yi-Che Lee, Tsung-Ting Kao, Yun Zhang, Hee-Jin Kim, & Jae-Hyun Ryou. (2013). Working toward high-power GaN/InGaN heterojunction bipolar transistors. Semiconductor Science & Technology, 28(7), 1–8. https://doi.org/10.1088/0268-1242/28/7/074025
Chicago
Shyh-Chiang Shen, Russell D. Dupuis, Zachery Lochner, Yi-Che Lee, Tsung-Ting Kao, Yun Zhang, Hee-Jin Kim, and Jae-Hyun Ryou. 2013. “Working toward High-Power GaN/InGaN Heterojunction Bipolar Transistors.” Semiconductor Science & Technology 28 (7): 1–8. doi:10.1088/0268-1242/28/7/074025.