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Double-Gate Light-Emitting Electrochemical Transistor: Confining the Organic p–n Junction.
- Source :
-
Journal of the American Chemical Society . 8/21/2013, Vol. 135 Issue 33, p12224-12227. 4p. - Publication Year :
- 2013
-
Abstract
- In conventional light-emitting electrochemical cells (LECs), an off-centered p–n junction is one of the major drawbacks, as it leads to exciton quenching at one of the charge-injecting electrodes and results in performance instability. To combat this problem, we have developed a new device configuration, the double-gate light-emitting electrochemical transistor (DG-LECT), in which the location of the light-emitting p–n junction can be precisely defined via the position of the two gate terminals. Based on a planar LEC structure, two gate electrodes made from an electrochemically active conducting polymer are employed to predefine the p- and n-doped area of the light-emitting polymer. Thus, a p–n junction is formed in between the p-doped and n-doped regions. We demonstrate a homogeneous and centered p–n junction as well as other predefined junction patterns in these DG-LECT devices. Additionally, we report an electrical model that explains the operation of the DG-LECTs. The DG-LECT device provides a new tool to study the fundamental physics of LECs, as it dissects the key working process of LEC into decoupled p-doping, n-doping, and electroluminescence. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00027863
- Volume :
- 135
- Issue :
- 33
- Database :
- Academic Search Index
- Journal :
- Journal of the American Chemical Society
- Publication Type :
- Academic Journal
- Accession number :
- 90086818
- Full Text :
- https://doi.org/10.1021/ja407049b