Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements.

MLA

Zhang, Yamin, et al. “Assessment of Pulse Conditions Effects on Reliability in GaN-Based High Electron Mobility Transistors by Transient Temperature Measurements.” Journal of Applied Physics, vol. 114, no. 9, Sept. 2013, pp. 094516-094516-5. EBSCOhost, https://doi.org/10.1063/1.4820763.

APA

Zhang, Y., Feng, S., Zhu, H., Zhang, G., Deng, B., & Ma, L. (2013). Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements. Journal of Applied Physics, 114(9), 094516-094516-5. https://doi.org/10.1063/1.4820763

Chicago

Zhang, Yamin, Shiwei Feng, Hui Zhu, Guangchen Zhang, Bing Deng, and Lin Ma. 2013. “Assessment of Pulse Conditions Effects on Reliability in GaN-Based High Electron Mobility Transistors by Transient Temperature Measurements.” Journal of Applied Physics 114 (9): 094516-094516-5. doi:10.1063/1.4820763.