Cite
Molecular-beam epitaxy and lattice parameter of GaNxSb1-x: deviation from Vegard's law for x > 0.02.
MLA
Ashwin, M. J., et al. “Molecular-Beam Epitaxy and Lattice Parameter of GaNxSb1-x: Deviation from Vegard’s Law for x > 0.02.” Journal of Physics D: Applied Physics, vol. 46, no. 26, July 2013, pp. 1–4. EBSCOhost, https://doi.org/10.1088/0022-3727/46/26/264003.
APA
Ashwin, M. J., Morris, R. J. H., Walker, D., Thomas, P. A., Dowsett, M. G., Jones, T. S., & Veal, T. D. (2013). Molecular-beam epitaxy and lattice parameter of GaNxSb1-x: deviation from Vegard’s law for x > 0.02. Journal of Physics D: Applied Physics, 46(26), 1–4. https://doi.org/10.1088/0022-3727/46/26/264003
Chicago
Ashwin, M. J., R. J. H. Morris, D. Walker, P. A. Thomas, M. G. Dowsett, T. S. Jones, and T. D. Veal. 2013. “Molecular-Beam Epitaxy and Lattice Parameter of GaNxSb1-x: Deviation from Vegard’s Law for x > 0.02.” Journal of Physics D: Applied Physics 46 (26): 1–4. doi:10.1088/0022-3727/46/26/264003.