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The High Quantum Efficiency of Exponential-Doping AlGaAs/GaAs Photocathodes Grown by Metalorganic Chemical Vapor Deposition.
- Source :
-
Chinese Physics Letters . 2013, Vol. 30 Issue 4, p1-4. 4p. - Publication Year :
- 2013
-
Abstract
- An exponential-doping structure is successfully applied to the preparation of AlGaAs/GaAs photocathodes through the metalorganic chemical vapor deposition (MOCVD) technique. The experimental results show that the quantum efficiency in the entire waveband region for the exponential-doping photocathodes grown by MOCVD is remarkably enhanced as compared to those grown by molecular beam epitaxy. As a result of the improved built-in electric fields and cathode performance parameters, the photoemission characteristics for the MOCVD-grown transmission-mode and reflection-mode AlGaAs/GaAs photocathodes are different over the wavelength region of interest. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 30
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 90172126
- Full Text :
- https://doi.org/10.1088/0256-307X/30/4/044205