High Quality Pseudomorphic In0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators.

The good quality of 200 pairs of highly strained Ino.24GaAs/GaAs multi-quantum-well (MQW) structure is demonstrated by the x-ray diffraction and photoluminescence curves. Large-area modulators based on the pseudomorphic Ino.24GaAs/GaAs MQW are designed and fabricated successfully, where the diameters are not less than 3mm and the working wavelength is extended to 1064nm. The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V . [ABSTRACT FROM AUTHOR]