Cite
Hardening measures for bipolar transistors against microwave-induced damage.
MLA
Chai Chang-Chun, et al. “Hardening Measures for Bipolar Transistors against Microwave-Induced Damage.” Chinese Physics B, vol. 22, no. 6, June 2013, pp. 1–5. EBSCOhost, https://doi.org/10.1088/1674-1056/22/6/068502.
APA
Chai Chang-Chun, Ma Zhen-Yang, Ren Xing-Rong, Yang Yin-Tang, Zhao Ying-Bo, & Yu Xin-Hai. (2013). Hardening measures for bipolar transistors against microwave-induced damage. Chinese Physics B, 22(6), 1–5. https://doi.org/10.1088/1674-1056/22/6/068502
Chicago
Chai Chang-Chun, Ma Zhen-Yang, Ren Xing-Rong, Yang Yin-Tang, Zhao Ying-Bo, and Yu Xin-Hai. 2013. “Hardening Measures for Bipolar Transistors against Microwave-Induced Damage.” Chinese Physics B 22 (6): 1–5. doi:10.1088/1674-1056/22/6/068502.