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Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene.

Authors :
Alexander-Webber, J. A.
Baker, A. M. R.
Janssen, T. J. B. M.
Tzalenchuk, A.
Lara-Avila, S.
Kubatkin, S.
Yakimova, R.
Piot, B. A.
Maude, D. K.
Nicholas, R. J.
Source :
Physical Review Letters. 8/30/2013, Vol. 111 Issue 9, p096601-1-096601-5. 5p.
Publication Year :
2013

Abstract

We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (Ic) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (ρxx = 0) shows a [1 - (T/Tc)²] dependence and persists up to Tc > 45 K at 29 T. With magnetic field Ic was found to increase ∞ B3/2 and Tc ∞ B². As the Fermi energy approaches the Dirac point, the v = 2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00319007
Volume :
111
Issue :
9
Database :
Academic Search Index
Journal :
Physical Review Letters
Publication Type :
Academic Journal
Accession number :
90287159
Full Text :
https://doi.org/10.1103/PhysRevLett.111.096601