Fabrication of in-plane gate transistors on hydrogenated diamond surfaces.

MLA

Garrido, J. A., et al. “Fabrication of In-Plane Gate Transistors on Hydrogenated Diamond Surfaces.” Applied Physics Letters, vol. 82, no. 6, Feb. 2003, p. 988. EBSCOhost, https://doi.org/10.1063/1.1545152.

APA

Garrido, J. A., Nebel, C. E., Todt, R., Rösel, G., Amann, M.-C., Stutzmann, M., Snidero, E., & Bergonzo, P. (2003). Fabrication of in-plane gate transistors on hydrogenated diamond surfaces. Applied Physics Letters, 82(6), 988. https://doi.org/10.1063/1.1545152

Chicago

Garrido, J. A., C. E. Nebel, R. Todt, G. Rösel, M.-C. Amann, M. Stutzmann, E. Snidero, and P. Bergonzo. 2003. “Fabrication of In-Plane Gate Transistors on Hydrogenated Diamond Surfaces.” Applied Physics Letters 82 (6): 988. doi:10.1063/1.1545152.