Fast crystallization and low power of Al-doped Sn2Se3 thin films for phase change memory applications.

Highlights: [•] Al-doped Sn2Se3 thin films were investigated for phase-change memory applications. [•] The thermal stability of Sn2Se3 thin films were improved by Al doping. [•] A fast transition speed was observed in Al-doped Sn2Se3 thin films by the picosecond laser pulses. [•] A lower power consumption of PCM cells could be achieved by Al doping. [ABSTRACT FROM AUTHOR]