Localized Si–Au eutectic bonding around sunken pad for fabrication of a capacitive absolute pressure sensor.

Highlights: [•] We develop a method to enhance the vacuum package of the capacitive pressure sensor in the process of anodic bonding. [•] The method is realized by using localized Si–Au eutectic bonding with a new structure with sunken pad. [•] The sunken pad is with a larger size than the opened window in silicon wafer. [•] Eutectic bonding occurred around the sunken pad. [Copyright &y& Elsevier]