Cite
Fabrication and Characterization of Enhancement-Mode High-\kappa~LaLuO3-AlGaN/GaN MIS-HEMTs.
MLA
Yang, Shu, et al. “Fabrication and Characterization of Enhancement-Mode High-\kappa~LaLuO3-AlGaN/GaN MIS-HEMTs.” IEEE Transactions on Electron Devices, vol. 60, no. 10, Oct. 2013, pp. 3040–46. EBSCOhost, https://doi.org/10.1109/TED.2013.2277559.
APA
Yang, S., Huang, S., Schnee, M., Zhao, Q.-T., Schubert, J., & Chen, K. J. (2013). Fabrication and Characterization of Enhancement-Mode High-\kappa~LaLuO3-AlGaN/GaN MIS-HEMTs. IEEE Transactions on Electron Devices, 60(10), 3040–3046. https://doi.org/10.1109/TED.2013.2277559
Chicago
Yang, Shu, Sen Huang, Michael Schnee, Qing-Tai Zhao, Jrgen Schubert, and Kevin J. Chen. 2013. “Fabrication and Characterization of Enhancement-Mode High-\kappa~LaLuO3-AlGaN/GaN MIS-HEMTs.” IEEE Transactions on Electron Devices 60 (10): 3040–46. doi:10.1109/TED.2013.2277559.