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Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals.
- Source :
-
IEEE Transactions on Electron Devices . Oct2013, Vol. 60 Issue 10, p3508-3514. 7p. - Publication Year :
- 2013
-
Abstract
- Two dual channel three-terminal transmission-gate-like n-p-lateral double-diffused metal oxide semiconductor (n-p-LDMOS) power devices with majorities of both types for conduction are proposed. Based on the method of generating a control signal for one of the gates inside the devices, each proposed n-p-LDMOS device only needs one gate control signal. One of the power devices can be used as an n-LDMOS device and the other can be used as a p-LDMOS device. The safe operating area is widened than the conventional n-LDMOS because of the compensation of electric flux density introduced by electron and hole currents. In addition, the specific ON-resistances of the new devices are reduced by \sim20\% and over 23% compared with that of the conventional n-LDMOS, respectively. The proposed power devices and their control methods are analyzed and verified by numerical simulations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 60
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 90677744
- Full Text :
- https://doi.org/10.1109/TED.2013.2275076