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Spectro-microscopy of ultra-thin SiN films on Si (<f>1 1 1</f>)
- Source :
-
Nuclear Instruments & Methods in Physics Research Section B . Jan2003, Vol. 200 Issue 1-4, p79. 6p. - Publication Year :
- 2003
-
Abstract
- Silicon nitride layers grown on Si (1 1 1) by atomic nitrogen exposure at elevated substrate temperatures have been investigated in situ by photoemission spectro-microsopy. From the X-ray photo emission spectra taken at various sample areas, the chemical composition of samples grown at 800 °C is found to be homogenous all over the surface, with a stoichiometry according to Si3N4. Due to attenuation of the photo electrons, the images also provide information about the morphology of the nitride films. For 800 °C, a smooth film is observed, whereas for growth temperatures exceeding 900 °C, an increased roughness is observed. [Copyright &y& Elsevier]
- Subjects :
- *PHOTOEMISSION
*THIN films
*ELECTRON spectroscopy
Subjects
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 200
- Issue :
- 1-4
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section B
- Publication Type :
- Academic Journal
- Accession number :
- 9154887
- Full Text :
- https://doi.org/10.1016/S0168-583X(02)01678-6