Back to Search
Start Over
Evidence for Non-Arrhenius Kinetics of Crystallization in Phase Change Memory Devices.
- Source :
-
IEEE Transactions on Electron Devices . Nov2013, Vol. 60 Issue 11, p3767-3774. 8p. - Publication Year :
- 2013
-
Abstract
- The programming speed in a phase change memory (PCM) relies on the kinetics of crystallization in the pulsed regime. To predict the programming speed and retention of a PCM, a careful understanding and modeling of crystallization in the phase change material is essential. In this paper, we study crystallization kinetics directly in PCM devices. From thermal annealing and pulsed-set experiments, we extract the temperature dependence of the crystallization in a wide temperature range between 170^\circC and the melting point (about 620^\circC). Our results indicate two markedly different activation energies below/above 300^\circC, thus providing evidence for a non-Arrhenius crystallization kinetics in PCM. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 60
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 91553913
- Full Text :
- https://doi.org/10.1109/TED.2013.2282637