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A Complete Physical Germanium-on-Silicon Quantum Dot Self-Assembly Process.
- Source :
-
Scientific Reports . 6/28/2013, p1-4. 4p. - Publication Year :
- 2013
-
Abstract
- Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to predefine nucleation sites is described. Self-assembly of ordered ∼10 nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the proposed method, the results describe an attractive technique to manufacture semiconductor quantum dot structures for future quantum electronic and photonic applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM dots
*GERMANIUM
*SEMICONDUCTORS
*PHOTONICS
*NANOINDENTATION
Subjects
Details
- Language :
- English
- ISSN :
- 20452322
- Database :
- Academic Search Index
- Journal :
- Scientific Reports
- Publication Type :
- Academic Journal
- Accession number :
- 91658668
- Full Text :
- https://doi.org/10.1038/srep02099