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Air-gap embedding GaN template for enhanced emission from light-emitting diodes.
- Source :
-
Current Applied Physics . Nov2013, Vol. 13 Issue 9, p1981-1987. 7p. - Publication Year :
- 2013
-
Abstract
- Abstract: Selective growth by metal-organic chemical vapor deposition (MOCVD), and electrochemical etching of a heavily Si-doped GaN (n+-GaN) interlayer were employed to obtain air-gaps embedded in a u-GaN layer. As confirmed by Raman spectroscopy, the introduction of an n+-GaN, which was later etched to obtain air-gaps, also enhanced the strain-compliance of GaN epilayer on sapphire substrate. An enhanced electroluminescence emission was observed from the light-emitting diodes (LEDs) fabricated on the air-gap embedding template. Using theoretical LED simulation, it was discerned that the increase in optical emission from the LED was caused predominantly by the redirection of photons at GaN/air-gap interface. Finite-difference time domain (FDTD) simulation method was employed to understand the mechanism of optical emission enhancement and its spatial variation over the LED surface. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 15671739
- Volume :
- 13
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Current Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 91726928
- Full Text :
- https://doi.org/10.1016/j.cap.2013.08.012