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RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition.
- Source :
-
Applied Surface Science . Nov2013, Vol. 285, p524-531. 8p. - Publication Year :
- 2013
-
Abstract
- Highlights: [•] Yttrium oxide thin films are deposited by RF Plasma MOCVD Process using Y(thd)3 precursor. [•] Films are deposited under varying influence of RF self-bias on the substrates during deposition (−50V to −175V). [•] It is possible to deposit single phase cubic Y2O3 films at low substrate temperature. [•] RF bias on substrate controls the texture of deposited film. [•] To the best of our knowledge, so far there is no reported study on the effect of RF substrate bias on properties of films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 285
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 91738280
- Full Text :
- https://doi.org/10.1016/j.apsusc.2013.08.087