Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films.

Highlights: [•] The coexistence of BRS and URS behaviors are observed in the V-doped ZnO film. [•] The transition from URS to BRS is realized by controlling I cc and voltage range. [•] Both BRS and URS modes possess good retention property and endurance. [ABSTRACT FROM AUTHOR]