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Polytypic InP Nanolaser Monolithically Integratedon (001) Silicon.
- Source :
-
Nano Letters . Nov2013, Vol. 13 Issue 11, p5063-5069. 7p. - Publication Year :
- 2013
-
Abstract
- On-chip optical interconnects stillmiss a high-performance lasermonolithically integrated on silicon. Here, we demonstrate a silicon-integratedInP nanolaser that operates at room temperature with a low thresholdof 1.69 pJ and a large spontaneous emission factor of 0.04. An epitaxialscheme to grow relatively thick InP nanowires on (001) silicon isdeveloped. The zincblende/wurtzite crystal phase polytypism and theformed type II heterostructures are found to promote lasing over awide wavelength range. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15306984
- Volume :
- 13
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Nano Letters
- Publication Type :
- Academic Journal
- Accession number :
- 91967300
- Full Text :
- https://doi.org/10.1021/nl402145r