Polytypic InP Nanolaser Monolithically Integratedon (001) Silicon.

On-chip optical interconnects stillmiss a high-performance lasermonolithically integrated on silicon. Here, we demonstrate a silicon-integratedInP nanolaser that operates at room temperature with a low thresholdof 1.69 pJ and a large spontaneous emission factor of 0.04. An epitaxialscheme to grow relatively thick InP nanowires on (001) silicon isdeveloped. The zincblende/wurtzite crystal phase polytypism and theformed type II heterostructures are found to promote lasing over awide wavelength range. [ABSTRACT FROM AUTHOR]