Temperature Dependence of the Piezotronic Effect inZnO Nanowires.

A comprehensiveinvestigation was carried out on n-type ZnO nanowiresfor studying the temperature dependence of the piezotronic effectfrom 77 to 300 K. In general, lowering the temperature results ina largely enhanced piezotronic effect. The experimental results showthat the behaviors can be divided into three groups depending on thecarrier doping level or conductivity of the ZnO nanowires. For nanowireswith a low carrier density (<1017/cm3at77 K), the pieozotronic effect is dominant at low temperature fordictating the transport properties of the nanowires; an opposite changeof Schottky barrier heights at the two contacts as a function of temperatureat a fixed strain was observed for the first time. At a moderate doping(between 1017/cm3and 1018/cm3at 77 K), the piezotronic effect is only dominant at onecontact, because the screening effect of the carriers to the positivepiezoelectric polarization charges at the other end (for n-type semiconductors).For nanowires with a high density of carriers (>1018/cm3at 77 K), the piezotronic effect almost vanishes.This studynot only proves the proposed fundamental mechanism of piezotroniceffect, but also provides guidance for fabricating piezotronic devices. [ABSTRACT FROM AUTHOR]