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Structural and electrical analysis of In-Sb-Te-based PCM cells.
- Source :
-
Physica Status Solidi - Rapid Research Letters . Nov2013, Vol. 7 Issue 11, p1009-1013. 5p. - Publication Year :
- 2013
-
Abstract
- Two In-Sb-Te compounds with low Te content (12 at.% and 17 at.%), deposited by metalorganic chemical vapour deposition, were implemented into prototype phase-change memory devices of size 50 × 50 nm2 and 93 × 93 nm2. These chalcogenides yielded devices with higher threshold voltage than those based on Ge-Sb-Te alloys. The endurance and programming window were markedly improved (from 103 to 106 cycles and from 1 to 2 orders of magnitude, respectively) when employing the Te-richer alloy. Moreover, in situ structural and electrical analysis on TiN/In-Sb-Te/dielectric stacks provided additional insight on the thermal stability of the two ternary phases In3SbTe2 and InSb0.8Te0.2, which were found to coexist in these compounds. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626254
- Volume :
- 7
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi - Rapid Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 91973289
- Full Text :
- https://doi.org/10.1002/pssr.201308074