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Design of junction termination structures for GaN Schottky power rectifiers

Authors :
Baik, K.H.
Irokawa, Y.
Ren, F.
Pearton, S.J.
Park, S.S.
Park, Y.J.
Source :
Solid-State Electronics. Jun2003, Vol. 47 Issue 6, p975. 5p.
Publication Year :
2003

Abstract

Junction termination extension (JTE) structures for GaN power Schottky rectifiers were investigated using a quasi-three-dimensional simulator. The use of single JTE edge termination was found to produce an almost fivefold increase in reverse breakdown voltage (<f>VB</f>) over an unterminated rectifier fabricated on the same bulk GaN substrate. The use of <f>p+</f> guard rings or planar junction termination with oxide field plates also offers significant enhancements in <f>VB</f> relative to unterminated rectifiers. <f>VB</f> was found to be a strong function of the JTE doping concentration and the <f>p+</f> guard-ring spacing. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00381101
Volume :
47
Issue :
6
Database :
Academic Search Index
Journal :
Solid-State Electronics
Publication Type :
Academic Journal
Accession number :
9230334
Full Text :
https://doi.org/10.1016/S0038-1101(02)00464-1