Design of junction termination structures for GaN Schottky power rectifiers

Junction termination extension (JTE) structures for GaN power Schottky rectifiers were investigated using a quasi-three-dimensional simulator. The use of single JTE edge termination was found to produce an almost fivefold increase in reverse breakdown voltage (<f>VB</f>) over an unterminated rectifier fabricated on the same bulk GaN substrate. The use of <f>p+</f> guard rings or planar junction termination with oxide field plates also offers significant enhancements in <f>VB</f> relative to unterminated rectifiers. <f>VB</f> was found to be a strong function of the JTE doping concentration and the <f>p+</f> guard-ring spacing. [Copyright &y& Elsevier]