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Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h.

Authors :
McSkimming, Brian M.
Wu, F.
Huault, Thomas
Chaix, Catherine
Speck, James S.
Source :
Journal of Crystal Growth. Jan2014, Vol. 386, p168-174. 7p.
Publication Year :
2014

Abstract

Plasma-assisted molecular beam epitaxial (PAMBE) growth of gallium nitride (GaN) was explored with a novel modification of a commercially available nitrogen plasma source. The modified nitrogen plasma source enabled a dramatic increase in the flux of active nitrogen and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N2 gas flow rates between 1 and 8sccm while varying the plasma source's RF forward power from 200 to 600W. The highest growth rate, and therefore the highest active nitrogen flux achieved was ~2.65μm/h. For optimized growth conditions the surfaces displayed a clear step-terrace structure with an average RMS roughness (3µm×3µm) on the order of 1nm. Secondary ion mass spectroscopy (SIMS) impurity analysis demonstrates oxygen and hydrogen incorporation of 1×1016 and 5×1016 respectively, comparable to the metal organic chemical vapor deposition (MOCVD) grown template layer. Initial un-optimized electron mobility measurements of 1µm thick GaN layers have shown a peak mobility of ~705cm2/Vs for an electron concentration of ~3.5×1016 cm−3. A revised universal growth diagram is proposed allowing the rapid determination of the metal flux needed to grow in a specific growth regime for any and all active nitrogen fluxes available. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00220248
Volume :
386
Database :
Academic Search Index
Journal :
Journal of Crystal Growth
Publication Type :
Academic Journal
Accession number :
92518099
Full Text :
https://doi.org/10.1016/j.jcrysgro.2013.10.013