Cite
From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices.
MLA
Mueller, Stefan, et al. “From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices.” IEEE Transactions on Electron Devices, vol. 60, no. 12, Dec. 2013, pp. 4199–205. EBSCOhost, https://doi.org/10.1109/TED.2013.2283465.
APA
Mueller, S., Muller, J., Hoffmann, R., Yurchuk, E., Schlosser, T., Boschke, R., Paul, J., Goldbach, M., Herrmann, T., Zaka, A., Schroder, U., & Mikolajick, T. (2013). From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices. IEEE Transactions on Electron Devices, 60(12), 4199–4205. https://doi.org/10.1109/TED.2013.2283465
Chicago
Mueller, Stefan, Johannes Muller, Raik Hoffmann, Ekaterina Yurchuk, Till Schlosser, Roman Boschke, Jan Paul, et al. 2013. “From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices.” IEEE Transactions on Electron Devices 60 (12): 4199–4205. doi:10.1109/TED.2013.2283465.