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Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs.
- Source :
-
IEEE Transactions on Electron Devices . Dec2013, Vol. 60 Issue 12, p4002-4007. 6p. - Publication Year :
- 2013
-
Abstract
- The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (VG\sim VD/2). At higher VG closer to VD, cold and hot carrier injection to the oxide bulk defect increases and dominates at the VG=VD stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to VG and highly at VG=VD, and this hot carrier injection into the oxide bulk defect is the main degradation mechanism. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 60
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 92520633
- Full Text :
- https://doi.org/10.1109/TED.2013.2285245