Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance.

Highlights: [•] Electrical characteristics of UTB (46nm) and NSB (1.6nm) SOI-MOSFETs are compared. [•] Initial SOI channel is thinned down to 1.6nm using a recessed-gate process. [•] Drain current values were found surprisingly different by 3 orders of magnitude. [•] Such a huge contrast was not found coherent with the literature. [•] We built a useful model approach to interpret NSB anomalous electrical behavior. [ABSTRACT FROM AUTHOR]