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Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance.
- Source :
-
Solid-State Electronics . Jan2014, Vol. 91, p28-35. 8p. - Publication Year :
- 2014
-
Abstract
- Highlights: [•] Electrical characteristics of UTB (46nm) and NSB (1.6nm) SOI-MOSFETs are compared. [•] Initial SOI channel is thinned down to 1.6nm using a recessed-gate process. [•] Drain current values were found surprisingly different by 3 orders of magnitude. [•] Such a huge contrast was not found coherent with the literature. [•] We built a useful model approach to interpret NSB anomalous electrical behavior. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 91
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 92654290
- Full Text :
- https://doi.org/10.1016/j.sse.2013.09.003