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Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers.
- Source :
-
Applied Physics Letters . 10/28/2013, Vol. 103 Issue 18, p181108. 4p. 3 Graphs. - Publication Year :
- 2013
-
Abstract
- We report the synthesis and optical characterization of semipolar-oriented III-nitride quantum well (QW) structures obtained by growth on chemical vapor deposited graphene layers using metalorganic vapor phase epitaxy. Various multi-quantum well stacks of GaN(QW)/AlGaN(barrier) and InGaN (QW)/GaN (barrier) were grown. Growth on graphene not only helps achieve a semipolar orientation but also allows facile transfer of the QW multilayer stack to other cheap, flexible substrates. We demonstrate room-temperature photoluminescence from layers transferred to flexible Kapton films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 103
- Issue :
- 18
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 92706473
- Full Text :
- https://doi.org/10.1063/1.4827539