AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS.

Authors :: Nohira, H.
Komatsu, A.
Yamashita, K.
Kakushima, K.
Iwai, H.
Sawano, K.
Shiraki, Y.
Source :: Journal of Electron Spectroscopy & Related Phenomena. Oct2013, Vol. 190 Issue Part B, p295-301. 7p.
Publication Year :: 2013
Abstract: Highlights: [•] AR-HPES is useful to the chemical bonding states and depth profiles of MOS structure. [•] We measure the effect of Si-cap layer and PDA on the compositional depth profiles. [•] We measure the effect of Si-cap layer and PDA on the chemical bonding states. [•] The La2O3 interlayer can suppress the oxide formation at high-κ/InGaAs during PMA. [ABSTRACT FROM AUTHOR]

Subjects :: *METAL oxide semiconductors
*HARD X-rays
*X-ray photoelectron spectroscopy
*CHEMICAL bonds
*SILICON
*LANTHANUM oxide
*DEPTH profiling

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