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Multilayered structure and enhanced thermoelectric properties of Bi1.5 Sb0.5 Te3 film with preferential growth.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Dec2013, Vol. 210 Issue 12, p2611-2616. 6p. - Publication Year :
- 2013
-
Abstract
- In this paper, uniquely (0 1 5)-preferential growth plane and alternating stress field can favorably influence the carrier and phonon transport properties of multilayered films. The p-type Bi1.5Sb0.5Te3 multilayered film has been successfully fabricated by a simple thermal co-evaporation technique. The composition, microstructure, and in-plane thermoelectric (TE) properties of films have been characterized and measured, respectively. The measurement results show that the multilayered Bi1.5Sb0.5Te3 film is (0 1 5)-preferential growth. The multilayered structure film is composed of the (0 1 5)-oriented and the ordinary nanolayers. The properties of the multilayered Bi1.5Sb0.5Te3 film has been significantly enhanced in comparison with those of the highly (0 1 5)-oriented and the ordinary Bi1.5Sb0.5Te3 films. The multilayered Bi1.5Sb0.5Te3 film with a TE dimensionless figure-of-merit ZT = 1.28 was obtained at room temperature. The transport mechanism of multilayered structure is proposed and investigated. The internal strain field and (0 1 5)-preferential growth plane are the main reasons for the properties enhancement observed in the multilayered Bi1.5Sb0.5Te3 film. Introduction of such uniquely (0 1 5)-preferential growth plane and alternating stress field into TE films is therefore a very promising approach. [ABSTRACT FROM AUTHOR]
- Subjects :
- *BISMUTH
*TELLURIUM
*THERMOELECTRICITY
*THIN films
*EVAPORATION (Chemistry)
Subjects
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 210
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 92866725
- Full Text :
- https://doi.org/10.1002/pssa.201329368