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Polarization-controlled Ohmic to Schottky transition at a metal/ferroelectric interface.
- Source :
-
Physical Review B: Condensed Matter & Materials Physics . Oct2013, Vol. 88 Issue 16, p165139-1-165139-6. 6p. - Publication Year :
- 2013
-
Abstract
- Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3 (n-BTO). The coexistence of a ferroelectric phase and conductivity opens the door to new functionalities that may provide a unique route for novel device applications. Using first-principles methods and electrostatic modeling, we explore the effect that the switchable polarization of n-BTO has on the electronic properties of the SrRuO3/n-BTO (001) interface. Ferroelectric polarization controls the accumulation or depletion of electron charge at the interface, and the associated bending of the n-BTO conduction band determines the transport regime across the interface. The interface exhibits a Schottky tunnel barrier for one polarization orientation, whereas an Ohmic contact is present for the opposite polarization orientation, leading to a large change in interface resistance associated with polarization reversal. Our calculations reveal a five orders of magnitude change in the interface resistance because of polarization switching. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10980121
- Volume :
- 88
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Physical Review B: Condensed Matter & Materials Physics
- Publication Type :
- Academic Journal
- Accession number :
- 92868245
- Full Text :
- https://doi.org/10.1103/PhysRevB.88.165139