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Heteroepitaxial III-V on Si(100) tandem absorbers structures for photoelectrolysis.
- Source :
-
AIP Conference Proceedings . Dec2013, Vol. 1568 Issue 1, p20-23. 4p. 1 Diagram, 2 Graphs. - Publication Year :
- 2013
-
Abstract
- Dilute nitride GaP(N,As)/Si(100) tandem absorber structures are considered for efficient direct photoelectrochemical water splitting. Both Si and GaP have already been used for hydrogen evolution; their monolithic integration promises sufficient voltage for bias-free photoelectrolysis and efficient use of the solar spectrum. The preparation of the III-V/Si(100) heterointerface thereby is the crucial step towards low-defect absorber structures. We study the growth of GaP/Si(100) quasi-substrates, as the template for the integration of lattice-matched dilute nitride layers, in situ during metalorganic vapor phase epitaxy. Reflection anisotropy spectroscopy provides precise control over the epitaxial surface structure during preparation enables in situ quantification of anti-phase disorder and allows optical access to the heterointerface. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 1568
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 92981318
- Full Text :
- https://doi.org/10.1063/1.4848082