Cite
Single-Event Upsets in Substrate-Etched CMOS SOI SRAMs Using Ultraviolet Optical Pulses With Sub-Micrometer Spot Size.
MLA
McMorrow, Dale, et al. “Single-Event Upsets in Substrate-Etched CMOS SOI SRAMs Using Ultraviolet Optical Pulses With Sub-Micrometer Spot Size.” IEEE Transactions on Nuclear Science, vol. 60, no. 6, Dec. 2013, pp. 4184–91. EBSCOhost, https://doi.org/10.1109/TNS.2013.2290307.
APA
McMorrow, D., Khachatrian, A., Roche, N. J.-H., Warner, J. H., Buchner, S. P., Kanyogoro, N., Melinger, J. S., Pouget, V., Larue, C., Hurst, A., & Kagey, D. (2013). Single-Event Upsets in Substrate-Etched CMOS SOI SRAMs Using Ultraviolet Optical Pulses With Sub-Micrometer Spot Size. IEEE Transactions on Nuclear Science, 60(6), 4184–4191. https://doi.org/10.1109/TNS.2013.2290307
Chicago
McMorrow, Dale, Ani Khachatrian, Nicolas J.-H. Roche, Jeffrey H. Warner, Stephen P. Buchner, Nderitu Kanyogoro, Joseph S. Melinger, et al. 2013. “Single-Event Upsets in Substrate-Etched CMOS SOI SRAMs Using Ultraviolet Optical Pulses With Sub-Micrometer Spot Size.” IEEE Transactions on Nuclear Science 60 (6): 4184–91. doi:10.1109/TNS.2013.2290307.