Cite
High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2.
MLA
Lin, T. D., et al. “High-Performance Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors by in-Situ Atomic-Layer-Deposited HfO2.” Applied Physics Letters, vol. 103, no. 25, Dec. 2013, p. 253509. EBSCOhost, https://doi.org/10.1063/1.4852975.
APA
Lin, T. D., Chang, W. H., Chu, R. L., Chang, Y. C., Chang, Y. H., Lee, M. Y., Hong, P. F., Chen, M.-C., Kwo, J., & Hong, M. (2013). High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2. Applied Physics Letters, 103(25), 253509. https://doi.org/10.1063/1.4852975
Chicago
Lin, T. D., W. H. Chang, R. L. Chu, Y. C. Chang, Y. H. Chang, M. Y. Lee, P. F. Hong, Min-Cheng Chen, J. Kwo, and M. Hong. 2013. “High-Performance Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors by in-Situ Atomic-Layer-Deposited HfO2.” Applied Physics Letters 103 (25): 253509. doi:10.1063/1.4852975.